npn BDW83, BDW83a, BDW83b, BDW83c, BDW83d, 23/10/2012 comset semiconductors 1 | 3 they are silicon epitaxial-base npn power mono lithic darlington transistor mounted in jedec to-218 plastic package. they are intended for use in power linear and switching applications. the complementary are bdw84, bdw84a, bdw84b, bdw84c, bdw84d compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage i b = 0 BDW83 45 v BDW83a 60 BDW83b 80 BDW83c 100 BDW83d 120 v cbo collector- emitter voltage i e = 0 BDW83 45 v BDW83a 60 BDW83b 80 BDW83c 100 BDW83d 120 v ebo emitter-base voltage i c = 0 5 v i c collector current 15 a i b base current 0.5 a p t total power dissipation 25c case temperatur 150 w 25c free aire temperatur 3.5 t j junction temperature -65 to +150 c t st g storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thjc junction to case thermal resistance 0.83 c/w r thja junction to free air thermal resistance 35.7 n n p p n n s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s
npn BDW83, BDW83a, BDW83b, BDW83c, BDW83d, 23/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter sustaining voltage (*) i c =30 ma i b =0 BDW83 45 - - v BDW83a 60 - - BDW83b 80 - - BDW83c 100 - - BDW83d 120 - - i ceo collector cutoff current i b =0, v ce =30 v BDW83 - - 1 ma i b =0, v ce =30 v BDW83a i b =0, v ce =40 v BDW83b i b =0, v ce =50 v BDW83c i b =0, v ce =60 v BDW83d i cbo collector cutoff current i e = 0, v cb =45 v BDW83 - - 0.5 ma i e = 0, v cb =60 v BDW83a i e = 0, v cb =80 v BDW83b i e = 0, v cb =100 v BDW83c i e = 0, v cb =120 v BDW83d i e = 0, v cb =45 v t case = 150c BDW83 - - 5 i e = 0, v cb =60 v t case = 150c BDW83a i e = 0, v cb =80 v t case = 150c BDW83b i e = 0, v cb =100 v t case = 150c BDW83c i e = 0, v cb =120 v t case = 150c BDW83d i ebo emitter cutoff current v eb =5.0 v, i c =0 - - 2 ma h fe dc current gain (*) i c =6 a , v ce =3.0 v 750 - 20 k - i c =15 a , v ce =3.0 v 100 - - v ce(sat) collector-emitter saturation voltage (1) i c =6 a , i b =12 ma - - 2.5 v i c =15 a , i b =150 ma - - 4 v be ( on ) base-emitter voltage (*) i c =6 a , i b =3 a - - 2.5 v ec parallel diode forward voltage i e = 15 a , i e = 0 - - 3.5 v t on turn-on time ic = 10 a, ib1 =-ib2=40 ma rl=3 ? ; vbe(off) = -4.2v duty cycle 2% - 0.9 - s t off turn-off time - 7 - (*) pulse duration = 300 s, duty cycle <= 2%
npn BDW83, BDW83a, BDW83b, BDW83c, BDW83d, 23/10/2012 comset semiconductors 3 | 3 mechanical data case to3pn n on isolated plastic package the centre pin is in electrical contact with the mounting tab. revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter
|
